MTB16P04J3 Datasheet PDF (P-Channel Enhancement Mode Power MOSFET)

MTB16P04J3 - P-Channel Enhancement Mode Power MOSFET

Features

Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH,.

Datasheet Details

Part number	MTB16P04J3
Manufacturer	Cystech Electonics
File Size	403.42 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB16P04J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7 MTB16P04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.

Published: Jul 30, 2011 |