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MTB16P04J3 - P-Channel Enhancement Mode Power MOSFET

MTB16P04J3 Description

CYStech Electronics Corp.P-Channel Enhancement Mode Power MOSFET Spec.No.: C706J3 Issued Date : 2009.04.23 Revised Date : Page No.: 1/7 MTB16P04.

MTB16P04J3 Features

* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbo

MTB16P04J3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB16P04J3 CYStek Product Specification

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Datasheet Details

Part number
MTB16P04J3
Manufacturer
Cystech Electonics
File Size
403.42 KB
Datasheet
MTB16P04J3_CystechElectonics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB16P04J3-like datasheet