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CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7
MTB16P04J3
Features
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
BVDSS ID RDSON(MAX)
-40V -25A 16mΩ
Equivalent Circuit
MTB16P04J3
Outline
TO-252
G：Gate D：Drain S：Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.
MTB16P04J3 Datasheet
