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Cystech Electonics

MTB16P04J3 Datasheet Preview

MTB16P04J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C706J3
Issued Date : 2009.04.23
Revised Date :
Page No. : 1/7
P-Channel Enhancement Mode Power MOSFET
MTB16P04J3
BVDSS
-40V
ID -25A
RDSON(MAX)
16mΩ
Features
Low Gate Charge
Simple Drive Requirement
RoHS compliant & Halogen-free package
Equivalent Circuit
MTB16P04J3
Outline
TO-252
GGate DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
www.MDTaBta1S6hPe0et44JU3.net
Limits
-40
±20
-25
-18
-100
-25
31.25
15
50
17
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




Cystech Electonics

MTB16P04J3 Datasheet Preview

MTB16P04J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C706J3
Issued Date : 2009.04.23
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
75
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
-40
-1.5
-
-
-
-
-25
-
-
- -V
-1.8 -3.2 V
24 - S
-
±100
nA
- -1 μA
- -25 μA
- -A
14 16 mΩ
22 27 mΩ
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
- 32 -
- 8.4 - nC
- 9.8 -
- 15 -
-
-
40
60
-
-
ns
- 50 -
- 4285 -
- 1642 - pF
- 1532 -
- 3.5 - Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
-25
-100
A
VSD *1
- - -1.3 V
trr - 40 - ns
Qrr - 30 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VDS =-5V, ID=-25A
VGS=±20, VDS=0
VDS =-32V, VGS =0
VDS =-30V, VGS =0, Tj=125°C
VDS =-5V, VGS =-4.5V
VGS =-10V, ID=-25A
VGS =-7V, ID=-20A
ID=-25A, VDS=-20V, VGS=-10V
VDS=-20V, ID=-1A, VGS=-10V,
RG=6Ω
VGS=0V, VDS=-20V, f=1MHz
VGS=15mV, VDS=0, f=1MHz
IF=IS, VGS=0V
IF=-25A, dIF/dt=100A/μs
Ordering Information
Device
MTB16P04J3
Package
TO-252
(RoHS compliant & Halogen-free package)
MTB16P04J3
Shipping
2500 pcs / Tape & Reel
Marking
B16P04
CYStek Product Specification


Part Number MTB16P04J3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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