MTB180N06KSN3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Simple drive requirement.
Small package outline.
ESD protected gate.
Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.8A RDSON@VGS=4.5V, ID=1.3A 55V 1.9A 145mΩ(typ) 173mΩ(typ) Symbol MTB180N06KSN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTB180N06KSN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friend.

MTB180N06KSN3 n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB180N06KSN3
Manufacturer	Cystech Electonics
File Size	344.35 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB180N06KSN3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. 60V N-Channel Enhancement Mode MOSFET MTB180N06KSN3 Spec. No. : C052N3 Issued Date : 2016.12.09 Revised Date : 2016.12.12 Page No. : 1/9 Features • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.8A RDSON@VGS=4.5V, ID=1.3A 55V 1.