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MTB180N06KSN3 - N-Channel Enhancement Mode Power MOSFET

MTB180N06KSN3 Description

CYStech Electronics Corp.60V N-Channel Enhancement Mode MOSFET MTB180N06KSN3 Spec.No.: C052N3 Issued Date : 2016.12.09 Revised Date : 2016.12.12 P.

MTB180N06KSN3 Features

* Simple drive requirement
* Small package outline
* ESD protected gate
* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.8A RDSON@VGS=4.5V, ID=1.3A 55V 1.9A 145mΩ(typ) 173mΩ(typ) Symbol MTB180N06KSN3 Outline SOT-23 D

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Datasheet Details

Part number
MTB180N06KSN3
Manufacturer
Cystech Electonics
File Size
344.35 KB
Datasheet
MTB180N06KSN3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB180N06KSN3-like datasheet