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Cystech Electonics

MTB1K0P25J3 Datasheet Preview

MTB1K0P25J3 Datasheet

P-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C091J3
Issued Date : 2015.10.07
Revised Date : 2015.10.13
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB1K0P25J3 BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-3A
RDS(ON)@VGS=-4.5V, ID=-3A
-250V
-3.2A
1.0Ω(typ)
1.1Ω(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTB1K0P25J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB1K0P25J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0P25J3
CYStek Product Specification




Cystech Electonics

MTB1K0P25J3 Datasheet Preview

MTB1K0P25J3 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C091J3
Issued Date : 2015.10.07
Revised Date : 2015.10.13
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=-10V
Continuous Drain Current @TC=100°C, VGS=-10V
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, ID=-3.2A, VDD=-50V
TC=25°C
Total Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
* 100% UIS testing in condition of VDD=-50V, L=10mH, VG=-10V, IAS=-3.2A, Rated VDS=-250V
Limits
-250
±20
-3.2
-2.0
-0.9
-0.7
-12.8
-3.2
51
31
12
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state (Note 2)
Symbol
RθJC
RθJA
Typical
3.6
15
40
Maximum
4
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
MTB1K0P25J3
CYStek Product Specification


Part Number MTB1K0P25J3
Description P-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
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