900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTB20A04Q8 Datasheet Preview

MTB20A04Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTB20A04Q8 BVDSS
ID@ VGS=10V, TC=25°C
ID@ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=8A
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
Pb-free lead plating & halogen-free package
RDSON@VGS=4.5V, ID=4A
40V
13.4A
8.4A
16mΩ(typ)
18mΩ(typ)
Equivalent Circuit
MTB20A04Q8
Outline
SOP-8
D2
D2
D1
D1
GGate SSource DDrain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB20A04Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A04Q8
CYStek Product Specification




Cystech Electonics

MTB20A04Q8 Datasheet Preview

MTB20A04Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C978Q8
Issued Date : 2016.12.23
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
40
±20
13.4
9.5
8.4 (Note 2)
7.0 (Note 2)
54 (Note 1)
3
2.4 (Note 2)
1.2 (Note 3)
-55~+175
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
RθJC
Thermal Resistance, Junction-to-ambient, max
RθJA
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
3. Surface mounted on minimum copper pad, pulse width10s.
Value
25
62.5 (Note 2)
125 (Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
40
1.0
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
- 7.6 - S VDS =10V, ID=5A
-
-
±100
nA VGS=±20V, VDS=0V
-
-
-
-
1
25
μA
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125°C
-
-
16
18
20
25
mΩ
VGS =10V, ID=8A
VGS =4.5V, ID=4A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
- 19.5 -
- 2.7 - nC VDS=20V, ID=8A, VGS=10V
- 3.9 -
- 8.2 -
-
-
17.4 -
36.6 -
ns
VDS=20V, ID=8A, VGS=10V,
RG=3Ω
- 6-
MTB20A04Q8
CYStek Product Specification


Part Number MTB20A04Q8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
PDF Download

MTB20A04Q8 Datasheet PDF






Similar Datasheet

1 MTB20A04Q8 Dual N-Channel Enhancement Mode Power MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy