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MTB2D0N04E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 84A 17.3A 2.2 mΩ(typ) 2.5 mΩ(typ) Symbol MTB2D0N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB2D0N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton E.

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Datasheet Details

Part number MTB2D0N04E3
Manufacturer Cystech Electonics
File Size 350.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB2D0N04E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB2D0N04E3 Spec. No. : C072E3 Issued Date : 2015.12.25 Revised Date : 2016.03.04 Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 40V 84A 17.3A 2.2 mΩ(typ) 2.
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