Datasheet4U Logo Datasheet4U.com

MTB2D5N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.6mΩ(typ) Symbol MTB2D5N03BQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB2D5N03BQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel.

📥 Download Datasheet

Datasheet preview – MTB2D5N03BQ8

Datasheet Details

Part number MTB2D5N03BQ8
Manufacturer Cystech Electonics
File Size 430.70 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB2D5N03BQ8 Datasheet
Additional preview pages of the MTB2D5N03BQ8 datasheet.

📁 Similar Datasheet

Other Datasheets by Cystech Electonics
  • MTB2D5N03BE3 - N-Channel Enhancement Mode Power MOSFET
  • MTB2D5N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET
  • MTB2D0N04E3 - N-Channel Enhancement Mode Power MOSFET
  • MTB2D0N04F3 - N-Channel Enhancement Mode Power MOSFET
  • MTB2D0N04H8 - N-Channel Enhancement Mode Power MOSFET
  • MTB20A03KQ8 - Dual N-Channel Enhancement Mode Power MOSFET
  • MTB20A03Q8 - Dual N-Channel Enhancement Mode Power MOSFET
  • MTB20A04DH8 - Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB2D5N03BQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.
Published: |