• Part: MTB2D5N03BQ8
  • Description: N-Channel Logic Level Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 430.70 KB
Download MTB2D5N03BQ8 Datasheet PDF
Cystech Electonics
MTB2D5N03BQ8
MTB2D5N03BQ8 is N-Channel Logic Level Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.6mΩ(typ) Symbol Outline Pin 1 SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB2D5N03BQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.5m H, ID=30A, VDD=20V Repetitive Avalanche Energy @ L=0.05m H TA=25℃ Total Power Dissipation TA=70℃ TC=25℃ TC=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS IDSM ID IDM IAS EAS EAR...