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Cystech Electonics

MTB2D5N03BQ8 Datasheet Preview

MTB2D5N03BQ8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C998Q8
Issued Date : 2015.12.16
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB2D5N03BQ8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
BVDSS
ID@ TA=25°C, VGS=10V
ID@ TC=25°C, VGS=10V
RDSON@VGS=10V, ID=19A
RDSON@VGS=4.5V, ID=15A
30V
21A
30A
2.7mΩ(typ)
3.6mΩ(typ)
Symbol
MTB2D5N03BQ8
Outline
Pin 1
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB2D5N03BQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB2D5N03BQ8
CYStek Product Specification




Cystech Electonics

MTB2D5N03BQ8 Datasheet Preview

MTB2D5N03BQ8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=30A, VDD=20V
Repetitive Avalanche Energy @ L=0.05mH
TA=25
Total Power Dissipation
TA=70
TC=25
TC=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
IDSM
ID
IDM
IAS
EAS
EAR
PDSM
PD
Tj, Tstg
Spec. No. : C998Q8
Issued Date : 2015.12.16
Revised Date :
Page No. : 2/9
Limits
30
±20
21
16.8
30
19
120 *1
30
225 *3
0.6 *2
3.1 *4
2.0 *4
6.3
2.5
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
20
40
*4
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. 100% tested by conditions of L=0.5mH, VGS=10V, IAS=19A, VDD=20V.
4. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
30 -
1.0 -
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
- 23.6
-
S VDS =10V, ID=18A
- - ±100 nA VGS=±20V
-
-
-
-
1
25
μA
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=85°C
-
-
2.7
3.6
3.4
4.7
mΩ
VGS =10V, ID=19A
VGS =4.5V, ID=15A
MTB2D5N03BQ8
CYStek Product Specification


Part Number MTB2D5N03BQ8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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