MTB35N04J3
MTB35N04J3 is N -Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features
- Low Gate Charge
- Simple Drive Requirement
- Ro HS pliant & Halogen-free package
BVDSS ID RDSON(MAX)
40V 12A 35mΩ
Equivalent Circuit
Outline
TO-252
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current
- 1 Avalanche Current Avalanche Energy @ L=0.1m H, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05m H
- 2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note :
- 1. Pulse width limited by maximum junction temperature
- 2. Duty cycle ≤ 1%
VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg
40 ±20 12 8 48 10 5 2 36 12 -55~+175
A m J W °C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a
.. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 2/7
Value 4.1 80
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON)
- 1
- 1
Min. 40 1.8 12
- Typ. 2.3 19 30 40 9.1 2.3 3 2.5 7.5 12 4 796 84 59 2.5 15 8
Max. 3.2 ±100 1 25 35 50 12 48 1.3
- Unit V V S n A μA μA A mΩ mΩ
Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =7V, ID=8A
- 1
Dynamic...
