MTB35N04J3 - N -Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB35N04J3
Manufacturer	Cystech Electonics
File Size	345.22 KB
Description	N -Channel Enhancement Mode Power MOSFET
Datasheet	MTB35N04J3_CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 12A 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH, I.

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Published: Mar 9, 2010 |