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Cystech Electonics

MTB4D0N03BJ3 Datasheet Preview

MTB4D0N03BJ3 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C092J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03BJ3
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=20A
VGS=4.5V, ID=10A
30V
15A
56A
3.9mΩ
5.0mΩ
Equivalent Circuit
MTB4D0N03BJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTB4D0N03BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03BJ3
CYStek Product Specification




Cystech Electonics

MTB4D0N03BJ3 Datasheet Preview

MTB4D0N03BJ3 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Energy @ L=0.1mH, ID=37A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C092J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 2/9
Limits
30
±20
56
35
15
12
224 *1
68 *3
4.9
36
14.4
2.5 *2
1.6 *2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
3.5
50 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=0.6mH, IAS=16A, VGS=10V, VDD=15V, rated 30V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
30
1
-
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
25 -
S VDS =5V, ID=15A
-
±100
nA VGS=±20V
-
-
1
10
μA
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=85°C
3.9
5.0
5.0
6.5
mΩ
VGS =10V, ID=20A
VGS =4.5V, ID=10A
Dynamic
Ciss - 1442 -
Coss
- 270 -
Crss - 182 -
Qg *1, 2 - 31.5 -
Qgs *1, 2
-
3.6
-
Qgd *1, 2
-
8.7
-
pF VDS=15V, VGS=0V, f=1MHz
nC VDS=15V, VGS=10V, ID=15A
MTB4D0N03BJ3
CYStek Product Specification


Part Number MTB4D0N03BJ3
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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