MTB4D0N03BJ3
MTB4D0N03BJ3 is N-Channel Logic Level Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=20A VGS=4.5V, ID=10A
30V 15A 56A 3.9mΩ 5.0mΩ
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB4D0N03BJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Energy @ L=0.1m H, ID=37A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05m H
TC=25℃
Total Power...
