MTB4D0N03BJ3 Datasheet Text
CYStech Electronics Corp.
Spec. No. : C092J3 Issued Date : 2015.10.23 Revised Date : Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03BJ3
Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=20A VGS=4.5V, ID=10A
30V 15A 56A 3.9mΩ 5.0mΩ
Equivalent Circuit
MTB4D0N03BJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB4D0N03BJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
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