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Cystech Electonics

MTB5D0P03H8 Datasheet Preview

MTB5D0P03H8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03H8 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-17A
-30V
-90A
-22A
3.2mΩ
5.1mΩ
Symbol
MTB5D0P03H8
Outline
Pin 1
EDFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB5D0P03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03H8
CYStek Product Specification




Cystech Electonics

MTB5D0P03H8 Datasheet Preview

MTB5D0P03H8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C965H8
Issued Date : 2014.12.12
Revised Date : 2015.03.26
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V (Note1)
Continuous Drain Current @ TC=100°C, VGS=-10V (Note1)
Continuous Drain Current @ TA=25°C, VGS=-10V (Note2)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note2)
Pulsed Drain Current
(Note3)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-15V
TC=25
(Note1)
Total Power Dissipation
TC=100
TA=25°C
(Note1)
(Note2)
TA=70°C
(Note2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
10s Steady State
-30
±25
-90
-57
-22 -14.2
-17.6
-11.4
-200 *1,2
-30
45
83.3
33.3
5.0 2.1
3.2 1.3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol Typical Maximum Unit
Thermal Resistance, Junction-to-case
Rth,j-c
1
1.5 °C/W
Thermal Resistance, Junction-to-ambient t10s
(Note2) Steady State
Rth,j-a
18
50
25
60
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
-30
-1.0
-
-
-
-
-
-
- - V VGS=0V, ID=-250μA
- -2.5 V VDS = VGS, ID=-250μA
58 -
S VDS =-5V, ID=-20A
-
±100
nA VGS=±25V
-
-
-1
-25
μA
VDS =-24V, VGS =0V
VDS =-24V, VGS =0, Tj=125°C
3.2 5.5 mΩ VGS =-10V, ID=-20A
5.1 8.5 mΩ VGS =-4.5V, ID=-17A
MTB5D0P03H8
CYStek Product Specification


Part Number MTB5D0P03H8
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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