MTB5D0P03H8 Description
CYStech Electronics Corp. 2014.12.12 Revised Date : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C.
MTB5D0P03H8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
- 30V -90A -22A 3.2mΩ 5.1mΩ