• Part: MTB5D0P03H8
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 406.12 KB
Download MTB5D0P03H8 Datasheet PDF
Cystech Electonics
MTB5D0P03H8
MTB5D0P03H8 is P-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-20A VGS=-4.5V, ID=-17A -30V -90A -22A 3.2mΩ 5.1mΩ Symbol Outline Pin 1 EDFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTB5D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965H8 Issued Date : 2014.12.12 Revised Date : 2015.03.26 Page No. : 2/ 9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) Pulsed Drain Current (Note3) Avalanche Current Avalanche Energy @ L=0.1m H, ID=-30A, VDD=-15V TC=25℃ (Note1) Total Power Dissipation TC=100℃...