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Cystech Electonics

MTB5D0P03J3 Datasheet Preview

MTB5D0P03J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03J3 BVDSS
ID @VGS=-10V
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-88A
3.7mΩ(typ)
5.1mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & halogen-free package
Equivalent Circuit
MTB5D0P03J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
MTB5D0P03J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03J3
CYStek Product Specification




Cystech Electonics

MTB5D0P03J3 Datasheet Preview

MTB5D0P03J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=175°C, TC=25°C, VGS=-10V
(Note 1)
Continuous Drain Current @ TJ=175°C, TC=100°C, VGS=-10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=-10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=-10V
(Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.5mH, ID=-26A, RG=25Ω
(Note 2)
VDS
VGS
ID
IDSM
IDM
IAS
EAS
TC=25°C
Total Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
(Note 1)
(Note 1)
PD
(Note 2) PDSM
(Note 2)
Tj, Tstg
Spec. No. : C965J3
Issued Date : 2014.09.15
Revised Date :
Page No. : 2/9
Limits
-30
±20
-88
-62
-15
-12
-352
-26
169
94
47
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state (Note 2)
Symbol
RθJC
RθJA
Typical
1.4
15
40
Maximum
1.6
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The maximum current limited by package is 56 A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB5D0P03J3
CYStek Product Specification


Part Number MTB5D0P03J3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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