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MTB60A06DH8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A.
  • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=5A.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ) Equivalent Circuit MTB60A06DH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB60A06DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package.

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Datasheet preview – MTB60A06DH8

Datasheet Details

Part number MTB60A06DH8
Manufacturer Cystech Electonics
File Size 639.65 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB60A06DH8 Datasheet
Additional preview pages of the MTB60A06DH8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C708H8 Issued Date : 2016.05.23 Revised Date : 2016.11.07 Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB60A06DH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=5A • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 60V 15A 9.5A 4.5A 3.
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