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Cystech Electonics

MTB60A06DH8 Datasheet Preview

MTB60A06DH8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C708H8
Issued Date : 2016.05.23
Revised Date : 2016.11.07
Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06DH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=5A
Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=5A
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
60V
15A
9.5A
4.5A
3.6A
34mΩ(typ)
38mΩ(typ)
Equivalent Circuit
MTB60A06DH8
Outline
Pin 1
DFN5×6
Pin 1
GGate DDrain SSource
Ordering Information
Device
MTB60A06DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB60A06DH8
CYStek Product Specification




Cystech Electonics

MTB60A06DH8 Datasheet Preview

MTB60A06DH8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C708H8
Issued Date : 2016.05.23
Revised Date : 2016.11.07
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=10Amps,
VDD=50V
Repetitive Avalanche Energy
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 5)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
60
±20
15
9.5
4.5
3.6
60
15
50
2.1
21
8.4
1.8
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
6
70
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.
4. When mounted on1 in² copper pad of FR-4 board ; 125°C/W when mounted on minimum copper pad.
5. 100% tested by conditions of L=0.1mH, IAS=10A, VGS=10V, VDD=25V.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
*GFS
IGSS
60
-
1.0
-
-
- - V VGS=0V, ID=250μA
0.06 - V/°C Reference to 25°C, ID=250μA
- 2.5 V VDS = VGS, ID=250μA
7 - S VDS =10V, ID=5A
-
±100
nA VGS=±20V
MTB60A06DH8
CYStek Product Specification


Part Number MTB60A06DH8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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