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MTB60A06Q8 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The MTB60A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free lead plating & Halogen-free package Equivalent Circuit MTB60A06Q8 Outline SOP-8 Pin 1 G:Gate S:Source D:Drain MTB60A06Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708Q8 Issued Date : 2010.12.16 Revised Date : 2012.08.06 Page No. : 2/9 Absolute Max.

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Datasheet Details

Part number MTB60A06Q8
Manufacturer Cystech Electonics
File Size 260.09 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB60A06Q8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C708Q8 Issued Date : 2010.12.16 Revised Date : 2012.08.06 Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTB60A06Q8 BVDSS ID RDSON@VGS=10V, ID=5A RDSON@VGS=5V, ID=4A 60V 7A 37mΩ(typ) 42mΩ(typ) Description The MTB60A06Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.