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MTB60A03KQ8 - Dual N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • ESD Protected.
  • Pb-free & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=3.6A RDS(ON)@VGS=4.5V, ID=3.6A RDS(ON)@VGS=4V, ID=3.6A 30V 4.8A 3.8A 31 mΩ(typ) 46 mΩ(typ) 53 mΩ(typ) Symbol MTB60A03KQ8 Outline SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB60A03KQ8-0-T3-G Package SOP-8 (Pb-free lead plating & halogen-free p.

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Datasheet Details

Part number MTB60A03KQ8
Manufacturer Cystech Electonics
File Size 364.81 KB
Description Dual N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB60A03KQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C122Q8 Issued Date : 2015.05.25 Revised Date : Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB60A03KQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • ESD Protected • Pb-free & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=3.6A RDS(ON)@VGS=4.5V, ID=3.6A RDS(ON)@VGS=4V, ID=3.6A 30V 4.8A 3.