Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C708H8 Issued Date : 2016.05.23 Revised Date : 2016.11.07 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06DH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
- Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A
- Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=5A
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and Halogen-free package
60V 15A 9.5A 4.5A 3.6A 34mΩ(typ) 38mΩ(typ)
Equivalent Circuit
Outline
Pin 1
DFN5×6 Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device MTB60A06DH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and...