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MTB60A06Q8 Datasheet Preview

MTB60A06Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C708Q8
Issued Date : 2010.12.16
Revised Date : 2012.08.06
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06Q8 BVDSS
ID
RDSON@VGS=10V, ID=5A
RDSON@VGS=5V, ID=4A
60V
7A
37mΩ(typ)
42mΩ(typ)
Description
The MTB60A06Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTB60A06Q8
Outline
SOP-8
Pin 1
GGate
SSource
DDrain
MTB60A06Q8
CYStek Product Specification




Cystech Electonics

MTB60A06Q8 Datasheet Preview

MTB60A06Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C708Q8
Issued Date : 2010.12.16
Revised Date : 2012.08.06
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=100°C
Pulsed Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
60
±20
7
4.4
4.3 (Note 2)
2.7 (Note 2)
20 (Note 1)
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
3. Surface mounted on minimum copper pad, pulse width10s.
Symbol
Rth,j-c
Rth,j-a
Value
30
78 (Note 2)
135 (Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
60 - - V VGS=0, ID=250μA
1.0 1.7 3.0 V VDS =VGS, ID=250μA
- 11 - S VDS =5V, ID=5A
-
-
±100
nA VGS=±20, VDS=0
- - 1 μA VDS =48V, VGS =0
- - 25 μA VDS =40V, VGS =0, Tj=125°C
- 37 50 mΩ VGS =10V, ID=5A
- 42 60 mΩ VGS =5V, ID=4A
Dynamic
Qg *1, 2
Qgs *1, 2
- 14 -
- 4 - nC VDS=30V, ID=7A, VGS=10V
Qgd *1, 2
- 4.9 -
td(ON) *1, 2 - 12 -
tr *1, 2
td(OFF) *1, 2
-
-
6
34
-
-
ns
VDS=30V, ID=1A, VGS=10V,
RG=6Ω
tf *1, 2 - 12 -
MTB60A06Q8
CYStek Product Specification


Part Number MTB60A06Q8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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