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MTC3504BJ4 Datasheet Preview

MTC3504BJ4 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 1/11
N & P-Channel Enhancement Mode Power MOSFET
MTC3504BJ4
N-CH
BVDSS
40V
P-CH
-40V
ID 12A -9A
Features
Low Gate Charge
Simple Drive Requirement
RoHS compliant & Halogen-free package
RDSON(MAX)
35mΩ 44mΩ
Equivalent Circuit
MTC3504BJ4
Outline
TO-252-4L
GGate DDrain
SSource
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Total Power Dissipation (TC=25)
Total Power Dissipation (TC=100)
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
Limits
N-channel P-channel
VDS 40
-40
VGS ±20
±20
ID 12
-9
ID 8
-6
IDM 48
-36
Pd
25
18
Tj, Tstg
-55~+175
Unit
V
A
W
°C
MTC3504BJ4
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.net/




Cystech Electonics

MTC3504BJ4 Datasheet Preview

MTC3504BJ4 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

www.DataSheet.co.kr
CYStech Electronics Corp.
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 2/11
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max * 1
Rth,j-a
Note : *1 62.5°C/W when mounted on a 1 in2 pad of 2 oz copper.
Value
6
42
Unit
°C/W
°C/W
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
40
1.8
-
-
-
-
12
-
-
- -V
2.3 3.2 V
19 - S
-
±100
nA
- 1 μA
- 25 μA
- -A
30 35 mΩ
40 50 mΩ
Dynamic
Qg *1
Qgs *1
Qgd *1
td(ON) *1
tr *1
td(OFF) *1
tf *1
Ciss
Coss
Crss
- 9.1 -
- 2.3 - nC
-3-
- 2.5 -
-
-
7.5
12
-
-
ns
-4-
- 796 -
- 84 - pF
- 59 -
Source-Drain Diode
IS *1
ISM *2
VSD *1
-
-
-
-
-
12
48
A
- 1.3 V
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Pulse width limited by maximum junction temperature.
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20, VDS=0
VDS =32V, VGS =0
VDS =30V, VGS =0, Tj=125°C
VDS =5V, VGS =10V
VGS =10V, ID=10A
VGS =7V, ID=8A
ID=15A, VDS=20V, VGS=10V
VDS=10V, ID=1A, VGS=10V,
RG=6Ω
VGS=0V, VDS=20V, f=1MHz
IF=IS, VGS=0V
MTC3504BJ4
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.net/


Part Number MTC3504BJ4
Description N & P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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MTC3504BJ4 Datasheet PDF






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