Description
The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Features
- Simple drive requirement.
- Low gate charge.
- Low on-resistance.
- Fast switching speed.
- Pb-free package
Equivalent Circuit
MTC3585N6
Outline
SOT-26
D1
S1
D2
G：Gate S：Source D：Drain
G1
S2
G2
MTC3585N6
CYStek Product Specification
Datasheet pdf - http://www. DataSheet4U. net/
www. DataSheet. co. kr
CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=2.
MTC3585N6 Datasheet
