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MTC3585N6 - N & P-Channel Enhancement Mode Power MOSFET

Description

The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free package Equivalent Circuit MTC3585N6 Outline SOT-26 D1 S1 D2 G：Gate S：Source D：Drain G1 S2 G2 MTC3585N6 CYStek Product Specification Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=2.

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Datasheet Details

Part number MTC3585N6
Manufacturer Cystech Electonics
File Size 892.20 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC3585N6 Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
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