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MTC3585N6 Datasheet Preview

MTC3585N6 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 1/8
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC3585N6
Description
The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low gate charge
Low on-resistance
Fast switching speed
Pb-free package
Equivalent Circuit
MTC3585N6
Outline
SOT-26
D2
S1
D1
GGate
SSource
DDrain
G2
S2
G1
MTC3585N6
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.net/




Cystech Electonics

MTC3585N6 Datasheet Preview

MTC3585N6 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

www.DataSheet.co.kr
CYStech Electronics Corp.
Spec. No. : C416N6
Issued Date : 2007.07.12
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Rth,ja
Limits
N-channel P-channel
20 -20
±12 ±12
3.5 -2.5
2.8 -1.97
10 -10
1.14
0.01
-55~+150
110
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
20
-
0.5
-
-
-
-
-
*GFS
-
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
*trr -
*Qrr -
- - V VGS=0, ID=250μA
0.02 - V/°C Reference to 25°C, ID=1mA
- 1.2 V VDS=VGS, ID=250μA
-
±100
nA VGS=±12V, VDS=0
- 1 μA VDS=20V, VGS=0
- 10 μA VDS=16V, VGS=0, Tj=70°C
-
-
75
125
mΩ
ID=3.5A, VGS=4.5V
ID=1.2A, VGS=2.5V
7 - S VDS=5V, ID=3A
230 370
55 - pF VDS=20V, VGS=0, f=1MHz
40 -
6-
8
10
-
-
ns
VDS=15V, ID=1A,
VGS=5V, RG=3.3Ω, RD=15Ω
3-
47
0.7 - nC VDS=16V, ID=3A, VGS=4.5V
2-
1.1 1.7 Ω f=1MHz
- 1.2 V VGS=0V, IS=1.2A
16
8
-
-
ns
nC
IS=3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTC3585N6
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.net/


Part Number MTC3585N6
Description N & P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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MTC3585N6 Datasheet PDF






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