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MTC5806AQ8 Datasheet Preview

MTC5806AQ8 Datasheet

N-&P-Channel MOSFET

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CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806AQ8 BVDSS
N-CH
60V
ID 4.5A
RDSON(typ.) @VGS=(-)10V 37mΩ
RDSON(typ.) @VGS=(-)4.5V 42mΩ
P-CH
-60V
-3.5A
70mΩ
93mΩ
Description
The MTC5806AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free package
Equivalent Circuit
MTC5806AQ8
Outline
SOP-8
GGate
SSource
DDrain
MTC5806AQ8
CYStek Product Specification




Cystech Electonics

MTC5806AQ8 Datasheet Preview

MTC5806AQ8 Datasheet

N-&P-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 2)
Continuous Drain Current @TA=70 °C (Note 2)
Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
ID
IDM
PD
Tj; Tstg
Limits
N-channel P-channel
60 -60
±20 ±20
4.5 -3.5
3.6 -2.8
20 -20
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
V
A
A
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
3.Surface mounted on minimum copper pad, pulse width10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS 60 - - V VGS=0, ID=250μA
VGS(th)
1.0 1.7 2.5 V VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0
IDSS
-
-
-
-
1
10
μA
VDS=48V, VGS=0
VDS=40V, VGS=0, Tj=55°C
*RDS(ON)
-
-
37
42
58
60
mΩ
VGS=10V, ID=4.5A
VGS=4.5V, ID=4A
*GFS
- 6 - S VDS=10V, ID=4.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
-
1173
-
- 45 - pF VDS=25V, VGS=0, f=1MHz
- 35 -
- 8 20
-
-
12
30
18
35
ns VDS=30V, ID=1A, VGS=10V, RG=6Ω
- 7 15
MTC5806AQ8
CYStek Product Specification


Part Number MTC5806AQ8
Description N-&P-Channel MOSFET
Maker Cystech Electonics
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