CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 2)
Continuous Drain Current @TA=70 °C (Note 2)
Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
ID
IDM
PD
Tj; Tstg
Limits
N-channel P-channel
60 -60
±20 ±20
4.5 -3.5
3.6 -2.8
20 -20
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
V
A
A
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS 60 - - V VGS=0, ID=250μA
VGS(th)
1.0 1.7 2.5 V VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0
IDSS
-
-
-
-
1
10
μA
VDS=48V, VGS=0
VDS=40V, VGS=0, Tj=55°C
*RDS(ON)
-
-
37
42
58
60
mΩ
VGS=10V, ID=4.5A
VGS=4.5V, ID=4A
*GFS
- 6 - S VDS=10V, ID=4.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
-
1173
-
- 45 - pF VDS=25V, VGS=0, f=1MHz
- 35 -
- 8 20
-
-
12
30
18
35
ns VDS=30V, ID=1A, VGS=10V, RG=6Ω
- 7 15
MTC5806AQ8
CYStek Product Specification
