CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
Pd
Tj
Tstg
Rth,ja
Limits
N-channel P-channel
60 -55
±20 ±20
4.5 -3.5
4 -3
20 -20
2
0.016
-55~+150
-55~+150
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
Unit
V
V
A
A
A
W
W / °C
°C
°C
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
60
1.0
-
-
-
-
-
-
- - V VGS=0, ID=250μA
- 3.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=48V, VGS=0
- 10 μA VDS=40V, VGS=0, Tj=55°C
55
42
85
58
mΩ
ID=4A, VGS=4.5V
ID=4.5A, VGS=10V
14 - S VDS=10V, ID=4.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
*IS -
*ISM
-
650 -
80 - pF VDS=25V, VGS=0, f=1MHz
35 -
11 20
8
19
18
35
ns VDS=30V, ID=1A, VGS=10V, RG=6Ω
6 15
12 16
2.4 - nC VDS=30V, ID=4.5A, VGS=10V
2.6 -
- 1.0 V VGS=0V, IS=1.3A
- 1.3 A
- 2.6 A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC5806Q8
CYStek Product Specification
