900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTC5806Q8 Datasheet Preview

MTC5806Q8 Datasheet

N-&P-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 1/9
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806Q8
Description
The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free package
Equivalent Circuit
MTC5806Q8
Outline
SOP-8
GGate
SSource
DDrain
MTC5806Q8
CYStek Product Specification




Cystech Electonics

MTC5806Q8 Datasheet Preview

MTC5806Q8 Datasheet

N-&P-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
Pd
Tj
Tstg
Rth,ja
Limits
N-channel P-channel
60 -55
±20 ±20
4.5 -3.5
4 -3
20 -20
2
0.016
-55~+150
-55~+150
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
Unit
V
V
A
A
A
W
W / °C
°C
°C
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
60
1.0
-
-
-
-
-
-
- - V VGS=0, ID=250μA
- 3.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=48V, VGS=0
- 10 μA VDS=40V, VGS=0, Tj=55°C
55
42
85
58
mΩ
ID=4A, VGS=4.5V
ID=4.5A, VGS=10V
14 - S VDS=10V, ID=4.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
*IS -
*ISM
-
650 -
80 - pF VDS=25V, VGS=0, f=1MHz
35 -
11 20
8
19
18
35
ns VDS=30V, ID=1A, VGS=10V, RG=6Ω
6 15
12 16
2.4 - nC VDS=30V, ID=4.5A, VGS=10V
2.6 -
- 1.0 V VGS=0V, IS=1.3A
- 1.3 A
- 2.6 A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTC5806Q8
CYStek Product Specification


Part Number MTC5806Q8
Description N-&P-Channel MOSFET
Maker Cystech Electonics
PDF Download

MTC5806Q8 Datasheet PDF






Similar Datasheet

1 MTC5806Q8 N-&P-Channel MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy