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BTC5201I3 - NPN Transistor

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Features

  • Symbol BTC5201I3 Outline TO-251 B：Base C：Collector E：Emitter B CE B C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTC5201I3 CYStek Product Specific.

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Datasheet Details

Part number BTC5201I3
Manufacturer Cystech Electonics Corp
File Size 172.00 KB
Description NPN Transistor
Datasheet download datasheet BTC5201I3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor www.DataSheet4U.com Issued Date : 2003.11.25 Revised Date : Page No. : 1/4 Spec. No. : C653I3 BTC5201I3 • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Features Symbol BTC5201I3 Outline TO-251 B：Base C：Collector E：Emitter B CE B C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
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