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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
www.DataSheet4U.com Issued Date : 2003.10.03
Revised Date : Page No. : 1/4
Spec. No. : C653D3
BTC5201D3
• Low VCE(sat) • High BVCEO • Excellent current gain characteristics
Features
Symbol
BTC5201D3
Outline
TO-126ML
B:Base C:Collector E:Emitter E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.