• Part: BTC5201I3
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics Corp
  • Size: 172.00 KB
Download BTC5201I3 Datasheet PDF
Cystech Electonics Corp
BTC5201I3
BTC5201I3 is NPN Transistor manufactured by Cystech Electonics Corp.
Features Symbol Outline TO-251 B:Base C:Collector E:Emitter B CE B C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTC5201I3 CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO - VCE(sat) 1 - VCE(sat) 2 - VBE(sat) 1 - VBE(sat) 2 - h FE 1 - h FE 2 f T Cob Min. 80 60 40 Typ. 0.1 50 130 Max. 10 50 0.3 0.6 1.2 1.5 Unit V µA µA V V V V MHz p F .. Issued Date : 2003.11.25 Revised Date : Page No. : 2/4 Spec. No. : C653I3 Test Conditions IC=30m A, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=0.2A IC=8A, IB=0.4A IC=2A, IB=0.2A IC=8A, IB=0.8A VCE=1V, IC=0.1A VCE=1V, IC=4A VCE=6V, IC=500m A, f=20MHz VCB=10V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current VCE = 5V .. Issued Date : 2003.11.25 Revised Date : Page No. : 3/4 Spec. No. : C653I3 Saturation Voltage vs Collector Current VCE(SAT) Saturation Voltage---(m...