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DG1N60 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG1N60 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG1N60 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG1N60
Manufacturer DGME
File Size 1.32 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG1N60-DGME.pdf
Additional preview pages of the DG1N60 datasheet.

DG1N60 Product details

Description

DG1N60N,, ,,,。 ,,。 DG1N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAINCHARACTERISTICS VDSS ID RDS(ON) Crss 600 1.3 9.0 5.0 V A Ω pF Symbol Package 1 /11

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