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DG6N65 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG6N65 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG6N65 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG6N65
Manufacturer DGME
File Size 841.53 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG6N65-DGME.pdf
Additional preview pages of the DG6N65 datasheet.

DG6N65 Product details

Description

DG6N65N，， ，，，。 ，，。 DG6N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 650 6.0 2.0 14 V A Ω pF Symbol Package 1 /9

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