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DIGITRON

MJ11033 Datasheet Preview

MJ11033 Datasheet

Power Transistor

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MJ11028, MJ11030, MJ11032 – NPN
MJ11029, MJ11031, MJ11033 – PNP
High-reliability discrete products
and engineering services since 1977
COMPLEMENTARY SILICON DARLINGTON POWER
TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Continuous collector current
Peak collector current
Continuous base current
Total device dissipation @ TC = 25°C
Derate above 25°C @ TC = 100°C
Operating and storage temperature range
Maximum lead temperature for soldering purposes ≤ 10s
Thermal resistance, junction to case
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
PD
TJ , Tstg
TL
RѲJC
MJ11028
MJ11029
60
60
MJ11030
MJ11031
90
90
5
50
100
2
300
1.71
-55 to +200
275
0.584
MJ11032
MJ11033
120
120
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol
Min
Max
OFF CHARACTERISTICS
Collector- emitter breakdown voltage (1)
IC = 100mA, IB = 0
Collector emitter leakage current
VCE = 60V, RBE = 1kΩ
VCE = 90V, RBE = 1kΩ
VCE = 120V, RBE = 1kΩ
VCE = 60V, RBE = 1kΩ, TC = 150¯C
VCE = 90V, RBE = 1kΩ, TC = 150¯C
VCE = 120V, RBE = 1kΩ, TC = 150¯C
Emitter cutoff current
VBE = 5V, IC = 0
Collector emitter leakage current
VCE = 50V, IB = 0
ON CHARACTERISTICS (1)
DC current gain
IC = 25A, VCE = 5V
IC = 50A, VCE = 5V
MJ10028, MJ10029
MJ11030, MJ11031
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
V(BR)CEO
ICER
IEBO
ICEO
hFE
60
90
120
-
-
-
-
-
-
-
-
1000
400
-
-
-
2
2
2
10
10
10
5
2
18000
-
Unit
V
V
V
A
A
W
W/°C
°C
°C
°C
Unit
V
mA
mA
mA
-
Rev. 20150309




DIGITRON

MJ11033 Datasheet Preview

MJ11033 Datasheet

Power Transistor

No Preview Available !

MJ11028, MJ11030, MJ11032 – NPN
MJ11029, MJ11031, MJ11033 – PNP
High-reliability discrete products
and engineering services since 1977
COMPLEMENTARY SILICON DARLINGTON POWER
TRANSISTORS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristics
Symbol
Collector emitter saturation voltage
IC = 25A, IB = 250mA
IC = 50A, IB = 300mA
Base emitter saturation voltage
IC = 25A, IB = 200mA
IC = 50A, IB = 500mA
Note 1: Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2.0%.
VCE(sat)
VBE(sat)
MECHANICAL CHARACTERISTICS
Case
TO-3
Marking
Alpha-numeric
Polarity
See below
Min
Max
Unit
-
2.5
V
-
4.5
-
3.0
V
-
3.5
TO-3
Inches
Millimeters
Min Max Min Max
CD - 0.875 - 22.220
CH 0.250 0.380 6.860 9.650
HT 0.060 0.135 1.520 3.430
BW - 1.050 - 26.670
HD 0.131 0.188 3.330 4.780
LD 0.038 0.043 0.970 1.090
LL 0.312 0.500 7.920 12.700
BL 1.550 REF
39.370 REF
MHS 1.177 1.197 29.900 30.400
PS 0.420 0.440 10.670 11.180
S1 0.655 0.675 16.640 17.150
Rev. 20150309



Part Number MJ11033
Description Power Transistor
Maker DIGITRON
Total Page 3 Pages
PDF Download

MJ11033 Datasheet PDF





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