Datasheet Summary
Product Summary (Typ. @ VGS = 3.3V, TA = +25°C)
VDSS 12V
RDS(ON) 14.1mΩ
Qg 10.5nC
Qgd 4.1nC
ID 7.5A
Description
This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by bining low thermal impedance with minimal RDS(ON) per footprint area.
Applications
- DC-DC Converters
- Battery Management
- Load Switch
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses
- CSP with Footprint 1.0mm × 1.0mm
- Height = 0.29mm for Low Profile
- Totally Lead-Free &...