DMN1017UCP3 Datasheet - DIODES

N-CHANNEL MOSFET

DMN1017UCP3 Features

* TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses

* CSP with Footprint 1.0mm × 1.0mm

* Height = 0.29mm for Low Profile

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* For a

DMN1017UCP3 General Description

This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications * DC-D.

DMN1017UCP3 Datasheet (573.92 KB)