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DMN2009USS Datasheet 20v N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCED INFORMATION DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID Max TA = +25°C 12.8A 12.1A 10.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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