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DMN2009LSS - Single N-channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters SO-8 S Mechan

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription for DMN2009LSS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2009LSS. For precise diagrams, and layout, please refer to the original PDF.

DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID max TA = +25°C 12A 10A ...

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GS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID max TA = +25°C 12A 10A 8A Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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