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DMN2009USS - 20V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Mechanical Data

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription for DMN2009USS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2009USS. For precise diagrams, and layout, please refer to the original PDF.

ADVANCED INFORMATION DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID Max TA =...

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ON) Max 8mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V ID Max TA = +25°C 12.8A 12.1A 10.5A Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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