DMN2009USS Datasheet (PDF) Download
Diodes Incorporated
DMN2009USS

Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note 3)