Datasheet Summary
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON)
3Ω @ VGS = 4.5V 4Ω @ VGS = 2.5V 6Ω @ VGS = 1.8V
ID TA = +25°C
0.3A 0.26A 0.21A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- DC-DC Converters
- Load Switch
- Power Management Functions
Features and Benefits
- Low On-Resistance
- Very Low Gate Threshold Voltage, 1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- ESD Protected Gate
- Totally...