• Part: DMN60H080DS
  • Description: N-CHANNEL MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 930.42 KB
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Datasheet Summary

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BVDSS 600V RDS(ON) 100Ω @ VGS = 10V Package SOT23 ID TA = +25°C 80mA Description This new generation uses advanced planar technology MOSFET, provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features - Low Input Capacitance - High BVDSS Rating for Power Application - Low Input/Output Leakage - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949...