DMN65D8LDWQ datasheet, mosfet equivalent, DIODES

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Features and benefits

V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-stat.

Application

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
*.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Dual N-Channel MOSFET
* Low On-Resista.

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