Datasheet Summary
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -12V
RDS(ON) max
11m @ VGS = -4.5V 14mΩ @ VGS = -3.7V 19mΩ @ VGS = -2.5V 30mΩ @ VGS = -1.8V
ID max TA = +25°C
-11A -9.7A -8.3A -6.6A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low On-Resistance
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- For automotive applications...