Datasheet Summary
N EN EW WP RPNOREDOUWDCUPTCRTO D U C T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -12V
RDS(ON) max
48mΩ @ VGS = -4.5V 59mΩ @ VGS = -2.5V 80mΩ @ VGS = -1.8V
ID MAX TA = +25°C
-3.8A -3.4A -2.9A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
SOT363
Features
- Low On-Resistance
- Low Gate Threshold...