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DMT2004UFV Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary BVDSS 24V RDS(ON) Max 5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: PowerDI®3333-8 (Type UX)  Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Key Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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