Datasheet4U Logo Datasheet4U.com

DMT10H003SPSW - 100V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable an

Key Features

  • BVDSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C 152A 118A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMT10H010LCT N-Channel MOSFET INCHANGE
DMT10-2-1111 LONG RANGE DISTANCE SENSORS SICK
DMT10-2-1113 LONG RANGE DISTANCE SENSORS SICK
DMT10-2-2211 LONG RANGE DISTANCE SENSORS SICK
DMT1 Output Power Chokes Coilcraft

Other Datasheets by Diodes Incorporated

Part Number Description
DMT10H009LCG 100V N-Channel MOSFET
DMT10H009LFG 100V N-CHANNEL MOSFET
DMT10H009LK3 100V N-Channel MOSFET
DMT10H009LPS 100V N-CHANNEL MOSFET
DMT10H009LSS 100V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DMT10H003SPSW Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C 152A 118A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  Wettable Flank for Improved Optical Inspection  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.