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DMN1016UCB6
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 12V
RDS(ON)
20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V
ID TA = +25°C
6.6A
6.1A
Features and Benefits
Low QG & QGD Small Footprint Low Profile 0.62mm Height Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.