DMN1019UVT Datasheet 12V N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 10.7A 9.8A 9.1A 8.0A 5.

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Datasheet Details

Part number	DMN1019UVT
Manufacturer	Diodes Incorporated
File Size	277.85 KB
Description	12V N-CHANNEL MOSFET
Download	DMN1019UVT Download (PDF)

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Load Switch  DC-DC Converters  Power Management Functions

Key Features

Low On-Resistance.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
Case: TSOT26.
Case Material.
Molded Plastic. UL Flammability Rating 94V-0.
Moisture Sensitivity: Level 1 per J-STD-020.
Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3.
Terminal Connections: See Diagram.
Weight: 0.008 grams (Approximate) TSOT26 D1 6D.

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