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DMN10H220L Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

General Description

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Mechanical Data  Package: SOT23  Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish—Matte Tin Annealed Over Copper Leadframe.

Overview

DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 1.6A 1.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • An automotive-compliant part is available under separate datasheet (DMN10H220LQ).