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DMN10H220LFDF - 100V N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Load Switch U-DFN2020-6 (Type F) Mechanical Data Case: U-DFN2020-6

Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN10H220LFDF

Datasheet Details

Part number DMN10H220LFDF
Manufacturer DIODES
File Size 468.18 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet DMN10H220LFDF Datasheet
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Full PDF Text Transcription

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Product Summary BVDSS 100V RDS(ON) Max 225mΩ @ VGS = 10V 290mΩ @ VGS = 4.5V ID Max TA = +25°C 2.2A 1.9A DMN10H220LFDF 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
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