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DMN10H220L
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max
220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V
ID TA = +25°C
1.6A 1.3A
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An automotive-compliant part is available under separate
datasheet (DMN10H220LQ)
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Mechanical Data
Package: SOT23 Package Material: Molded Plastic, “Green” Molding Compound.