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DMN10H220LVT - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions Backlighting

Features

  • Low Input Capacitance.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: TSOT26.
  • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections: See Diagram.
  • Terminals: Finish.
  • Tin Finish Annealed over Copper Leadf.

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Datasheet preview – DMN10H220LVT

Datasheet Details

Part number DMN10H220LVT
Manufacturer DIODES
File Size 343.91 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet DMN10H220LVT Datasheet
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Full PDF Text Transcription

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ADVANCE INFORMATION DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(on) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.24A 2.10A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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