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DMN10H220LE Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 220mΩ @ VGS = 10V 250mΩ @ VGS = 4.5V ID TA = +25°C 2.3A 2.

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  DC-DC Converters  Power Management Functions

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMN10H220LEQ) Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classificat.