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DMN2300UFL4 - Dual N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Load switch Mechanical Data Case: X2-DFN1310-6 Case Material: Mold

Key Features

  • Footprint of Just 1.3 mm2.
  • Ultra Low Profile Package - 0.4mm Profile.
  • On Resistance.

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Full PDF Text Transcription for DMN2300UFL4 (Reference)

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DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V Max RDS(on) 195mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 380mΩ @ VGS = 1.8V 520mΩ @ VGS = 1.5...

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Ω @ VGS = 4.5V 260mΩ @ VGS = 2.5V 380mΩ @ VGS = 1.8V 520mΩ @ VGS = 1.5V ID max TA = +25°C (Note 6) 2.11A 1.83A 1.51A 1.29A Features and Benefits • Footprint of Just 1.3 mm2 • Ultra Low Profile Package - 0.4mm Profile • On Resistance <200mΩ • Low Gate Threshold Voltage • Fast Switching Speed • Ultra-Small Surface Mount Package • ESD Protected Gate 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.

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