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DMN2400UV - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Power-management functions Battery-operated systems and solid-st

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN2400UV

Datasheet Details

Part number DMN2400UV
Manufacturer Diodes Incorporated
File Size 349.10 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMN2400UV Datasheet
Additional preview pages of the DMN2400UV datasheet.

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Full PDF Text Transcription

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Product Summary BVDSS 20V RDS(ON) Max 0.48Ω @ VGS = 5V 0.7Ω @ VGS = 2.5V ID Max TA = +25°C 1.33A 1.2A Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications • Power-management functions • Battery-operated systems and solid-state relays • Load switches SOT563 DMN2400UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
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