Download DMN2400UV Datasheet PDF
Diodes Incorporated
DMN2400UV
DMN2400UV is Dual N-Channel MOSFET manufactured by Diodes Incorporated.
Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications - Power-management functions - Battery-operated systems and solid-state relays - Load switches SOT563 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Mechanical Data - Package: SOT563 - Package Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 - Weight: 0.003 grams (Approximate) ESD PROTECTED Top View Ordering Information (Note 4) Bottom View Internal Schematic Top View Pinout Notes: Part Number DMN2400UV-7 DMN2400UV-13 Package SOT563 SOT563 Qty. 3,000...