Datasheet4U Logo Datasheet4U.com

DMN2990UFZ - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Analog S

Key Features

  • Low Package Profile, 0.42mm Maximum Package Height.
  • 0.62mm x 0.62mm Package Footprint.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Max.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data.
  • Case: X2-DFN0606-3.
  • Case Material: Molded Plastic, “Green” Mol.

📥 Download Datasheet

Full PDF Text Transcription for DMN2990UFZ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2990UFZ. For precise diagrams, and layout, please refer to the original PDF.

A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN2990UFZ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5...

View more extracted text
t Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID max TA = +25°C 250mA 230mA 180mA 150mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • General Purpose Interfacing Switch • Power Management Functions • Analog Switch Features and Benefits • Low Package Profile, 0.42mm Maximum Package Height • 0.62mm x 0.62mm Package Footprint • Low On-Resistance • Very Low Gate Threshold Voltage, 1.