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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
DMN3026LVTQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
23mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V
ID TA = +25°C
6.6A
5.8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.