DMP1018UCB9 mosfet equivalent, p-channel mosfet.
* LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching
* Vgs(th) = -0.8V typ. for a L.
* DC-DC Converters
* Battery Management
* Load Switch
DMP1018UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Feature.
This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedan.
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