DMP1018UCB9 Datasheet P-Channel MOSFET

Manufacturer: Diodes Incorporated

Overview: AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN Product Summary VDSS -12V RDS(on) 12mΩ Qg 4.9nC Qgd 1.1nC ID -7.6A Typ. @ VGS = -4.

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DMP1018UCB9 p-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMP1018UCB9
Manufacturer	Diodes Incorporated
File Size	322.93 KB
Description	P-Channel MOSFET
Download	DMP1018UCB9 Download (PDF)

General Description

This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.

Applications  DC-DC Converters  Battery Management  Load Switch DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching.
Vgs(th) = -0.8V typ. for a Low Turn-On Potential.
CSP with Footprint 1.5mm × 1.5mm.
Height = 0.62mm for Low Profile.
ESD = 3kV HBM Protection of Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.

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