DMP1018UCB9 Datasheet - Diodes

P-Channel MOSFET

DMP1018UCB9 Features

* LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching

* Vgs(th) = -0.8V typ. for a Low Turn-On Potential

* CSP with Footprint 1.5mm × 1.5mm

* Height = 0.62mm for Low Profile

* ESD = 3kV HBM Protection o

DMP1018UCB9 General Description

This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Appli.

DMP1018UCB9 Datasheet (322.93 KB)

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DMP1018UCB9

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DIODES ↗

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322.93 KB

Description:

P-channel mosfet.
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN Product Summary VDSS -12V RDS(on) 12mΩ Qg 4.9nC Qgd 1.1nC ID -7.6A Typ. @ VGS = -4.5V, TA = +2.

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DMP1018UCB9 P-Channel MOSFET Diodes

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DMP1018UCB9 Features

DMP1018UCB9 General Description

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