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DMP1045UFY4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1045UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-12V
RDS(on) max
32m@ VGS = -4.5V
45m@ VGS = -2.5V
75m@ VGS = -1.8V
ID
TA = 25°C
-5.5A
-4.5A
-3.2A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Analog Switch
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN2015-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (approximate)
X2-DFN2015-3
ESD PROTECTED TO 3kV
Top View
Bottom View
S
D
G
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP1045UFY4-7
DMP1045UFY4-13
Case
X2-DFN2015-3
X2-DFN2015-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
15P
YM
15P = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
DMP1045UFY4
Document number: DS31853 Rev. 7 - 2
1 of 6
www.diodes.com
September 2012
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1045UFY4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP1045UFY4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady TA = +25°C
Continuous Drain Current VGS = -4.5V (Note 6)
State
t<5s
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Symbol
VDSS
VGSS
ID
IS
IDM
Value
-12
±8
-5.5
-4.3
-6.5
-5.1
-2.2
-25
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Notes 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.7
0.4
193
135
1.7
1.1
73
52
17
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge (VGS = -8V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-12
-
-
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-0.55
26
31
51
12
-0.6
1291
266
242
13
23.7
14.7
1.8
4.6
14
22
74
75
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-1.0
±10
-1.0
32
45
75
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -12V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.0A
mVGS = -2.5V, ID = -3.5A
VGS = -1.8V, ID = -2.7A
S VDS = -5V, ID = -4A
V VGS = 0V, IS = -1A
pF
pF VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -10V, ID = -4A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 2.5Ω, RG = 3.0Ω
ns
DMP1045UFY4
Document number: DS31853 Rev. 7 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated


Part Number DMP1045UFY4
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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