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DMP1055UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1055UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-12V
RDS(ON) max
59m@ VGS = -4.5V
81m@ VGS = -2.5V
115m@ VGS = -1.8V
ID MAX
TA = +25°C
-3.9A
-3.3A
-2.8A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
ESD PROTECTED
U-DFN2020-6
Type B
D2
D2
G1
S1
Pin1
S2
G2
D1
D1
Bottom View
D1 D2
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Q1 P-CHANNEL
Q2 P-CHANNEL
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP1055UFDB -7
DMP1055UFDB -13
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
D6 = Product Type Marking Code
D6
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
1 of 6
www.diodes.com
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
April 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1055UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
DMP1055UFDB
Value
-12
±8
-3.9
-3.1
-5.0
-4.0
-1.7
-25
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.36
1.89
92
66
18
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-12
-0.4
Typ
37
48
69
88
-0.7
1028
285
254
19.6
13
20.8
1.8
4.5
5.6
12.8
30.7
25.4
31.6
7.8
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Max
-1.0
±10
-1
59
81
115
215
-1.2
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -12V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.6A
m
VGS = -2.5V, ID = -3.1A
VGS = -1.8V, ID = -2.6A
VGS = -1.5V, ID = -0.5A
V VGS = 0V, IS = -3.7A
pF
pF
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VDS = -10V, ID = -4.7A
nC
ns
ns VDD = -6V, VGS = -4.5V,
ns RL = 1.6, RG = 1
ns
nS IS = -3.6A, dI/dt = 100A/μs
nC IS = -3.6A, dI/dt = 100A/μs
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated


Part Number DMP1055UFDB
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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